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- Ruoff, Rodney S.
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Growth of patterned SiC by ion modification and annealing of C-60 films on silicon
- Author(s)
- Moro, L, Paul, A, Lorents, DC, Malhotra, R, Ruoff, RS, Jiang, L, Stupian, GW, Wu, KJ, Subramoney, S
- Issued Date
- 1997-09
- Citation
- APPLIED SURFACE SCIENCE, v.119, no.1-2, pp.76 - 82
- Abstract
- Silicon carbide films on silicon have been grown by annealing of pre-deposited C-60 film on silicon at T = 900 degrees C for 300 min. C-60 molecules are confined on the surface during annealing by a non-volatile carbon layer produced by irradiation of the C-60 film with an ion gun (Ar+ or Ga+). During annealing the C-60 film confined in the irradiated areas forms SiC while the remaining C-60 evaporates off. These results introduce a new method of direct patterning SiC structures on Si with submicron resolution.
- Publisher
- ELSEVIER SCIENCE BV
- ISSN
- 0169-4332
- Keyword
- CARBIDE FILMS, CARBONIZATION, FULLERENE
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