There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 82 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 76 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 119 | - |
dc.contributor.author | Moro, L | - |
dc.contributor.author | Paul, A | - |
dc.contributor.author | Lorents, DC | - |
dc.contributor.author | Malhotra, R | - |
dc.contributor.author | Ruoff, RS | - |
dc.contributor.author | Jiang, L | - |
dc.contributor.author | Stupian, GW | - |
dc.contributor.author | Wu, KJ | - |
dc.contributor.author | Subramoney, S | - |
dc.date.accessioned | 2023-12-22T12:36:59Z | - |
dc.date.available | 2023-12-22T12:36:59Z | - |
dc.date.created | 2021-10-19 | - |
dc.date.issued | 1997-09 | - |
dc.description.abstract | Silicon carbide films on silicon have been grown by annealing of pre-deposited C-60 film on silicon at T = 900 degrees C for 300 min. C-60 molecules are confined on the surface during annealing by a non-volatile carbon layer produced by irradiation of the C-60 film with an ion gun (Ar+ or Ga+). During annealing the C-60 film confined in the irradiated areas forms SiC while the remaining C-60 evaporates off. These results introduce a new method of direct patterning SiC structures on Si with submicron resolution. | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.119, no.1-2, pp.76 - 82 | - |
dc.identifier.doi | 10.1016/S0169-4332(96)01086-0 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.scopusid | 2-s2.0-0031236296 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54530 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433296010860?via%3Dihub | - |
dc.identifier.wosid | A1997XY22000011 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Growth of patterned SiC by ion modification and annealing of C-60 films on silicon | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CARBIDE FILMS | - |
dc.subject.keywordPlus | CARBONIZATION | - |
dc.subject.keywordPlus | FULLERENE | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.