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- Ruoff, Rodney S.
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Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
- Author(s)
- Brown, J. J., Baca, A. I., Bertness, K. A., Dikin, D. A., Ruoff, R. S., Bright, V. M.
- Issued Date
- 2011-04
- Citation
- SENSORS AND ACTUATORS A-PHYSICAL, v.166, no.2, pp.177 - 186
- Abstract
- This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires(1) that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042 +/- 0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0 +/- 1.7 GPa to 7.5 +/- 3.4 GPa. Failure modes included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS test actuator.
- Publisher
- ELSEVIER SCIENCE SA
- ISSN
- 0924-4247
- Keyword (Author)
- Tensile Loading, Gallium Nitride, Nanowire, Single Crystal, Mechanical Testing, MEMS
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