File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

RuoffRodney Scott

Ruoff, Rodney S.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

Author(s)
Fallahazad, BabakHao, YufengLee, KayoungKim, SeyoungRuoff, R. S.Tutuc, E.
Issued Date
2012-05
DOI
10.1103/PhysRevB.85.201408
URI
https://scholarworks.unist.ac.kr/handle/201301/54255
Fulltext
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.201408
Citation
PHYSICAL REVIEW B, v.85, no.20, pp.201408
Abstract
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors nu = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.
Publisher
AMER PHYSICAL SOC
ISSN
1098-0121
Keyword
RAMAN-SPECTROSCOPY

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.