There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 20 | - |
dc.citation.startPage | 201408 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 85 | - |
dc.contributor.author | Fallahazad, Babak | - |
dc.contributor.author | Hao, Yufeng | - |
dc.contributor.author | Lee, Kayoung | - |
dc.contributor.author | Kim, Seyoung | - |
dc.contributor.author | Ruoff, R. S. | - |
dc.contributor.author | Tutuc, E. | - |
dc.date.accessioned | 2023-12-22T05:08:55Z | - |
dc.date.available | 2023-12-22T05:08:55Z | - |
dc.date.created | 2021-10-18 | - |
dc.date.issued | 2012-05 | - |
dc.description.abstract | We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors nu = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance. | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.85, no.20, pp.201408 | - |
dc.identifier.doi | 10.1103/PhysRevB.85.201408 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.scopusid | 2-s2.0-84861830085 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54255 | - |
dc.identifier.url | https://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.201408 | - |
dc.identifier.wosid | 000304253900001 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.