JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.78, no.1, pp.45 - 50
Abstract
As the rapid development of electronic technology, the amount of unavoidable heat from electronic components is also increasing. Therefore, the demand for efficient heat dissipation materials with high performance is continuously increasing. Graphene is one of the best candidates in terms of heat dissipation property and intrinsic flexibility. In this work, we show that chemical doping is an effective way to additionally improve the heat dissipation property of large-scale CVD grown monolayer graphene. We found that heat dissipation property of monolayer graphene, chemically doped with HNO3 and PFSA improves by the 9.94% and 4.12% compared with pristine graphene, respectively. Moreover, it shows the stable heat dissipation property after bending test.