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김광수

Kim, Kwang S.
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Supra-Binary Polarization in a Ferroelectric Nanowire

Author(s)
Xu, WentaoWang, LihuaYang, David ChangMoHajibabaei, AmirLee, YeongjunPark, CheolminLee, Tae-WooKim, Kwang S.
Issued Date
2021-07
DOI
10.1002/adma.202101981
URI
https://scholarworks.unist.ac.kr/handle/201301/52996
Fulltext
https://onlinelibrary.wiley.com/doi/10.1002/adma.202101981
Citation
ADVANCED MATERIALS, v.33, no.26, pp.2101981
Abstract
The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword (Author)
field‐effect transistorsgraphene nanoribbonsLandau–Ginzburg theoryquaternary polarization switchingferroelectric nanowires
Keyword
POLY(VINYLIDENE FLUORIDE)GRAPHENEBEHAVIORPHASESTORAGEMEMORYFILMS

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