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김광수

Kim, Kwang S.
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dc.citation.number 26 -
dc.citation.startPage 2101981 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 33 -
dc.contributor.author Xu, Wentao -
dc.contributor.author Wang, Lihua -
dc.contributor.author Yang, David ChangMo -
dc.contributor.author Hajibabaei, Amir -
dc.contributor.author Lee, Yeongjun -
dc.contributor.author Park, Cheolmin -
dc.contributor.author Lee, Tae-Woo -
dc.contributor.author Kim, Kwang S. -
dc.date.accessioned 2023-12-21T15:40:14Z -
dc.date.available 2023-12-21T15:40:14Z -
dc.date.created 2021-06-08 -
dc.date.issued 2021-07 -
dc.description.abstract The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.33, no.26, pp.2101981 -
dc.identifier.doi 10.1002/adma.202101981 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-85106269291 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/52996 -
dc.identifier.url https://onlinelibrary.wiley.com/doi/10.1002/adma.202101981 -
dc.identifier.wosid 000653168400001 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Supra-Binary Polarization in a Ferroelectric Nanowire -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor field‐ -
dc.subject.keywordAuthor effect transistors -
dc.subject.keywordAuthor graphene nanoribbons -
dc.subject.keywordAuthor Landau– -
dc.subject.keywordAuthor Ginzburg theory -
dc.subject.keywordAuthor quaternary polarization switching -
dc.subject.keywordAuthor ferroelectric nanowires -
dc.subject.keywordPlus POLY(VINYLIDENE FLUORIDE) -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus BEHAVIOR -
dc.subject.keywordPlus PHASE -
dc.subject.keywordPlus STORAGE -
dc.subject.keywordPlus MEMORY -
dc.subject.keywordPlus FILMS -

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