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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides

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Title
Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
Author
Kim, Yoon SeokKang, SojungSo, Jae-PilKim, Jong ChanKim, KangwonYang, SeunghoonJung, YeonjoonShin, YongjunLee, SeongwonLee, DonghunPark, Jin-WooCheong, HyeonsikJeong, Hu YoungPark, Hong-GyuLee, Gwan-HyoungLee, Chul-Ho
Issue Date
2021-03
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Citation
SCIENCE ADVANCES, v.7, no.13, pp.eabd7921
Abstract
Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic-layer-confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered hetero-structures for 2D quantum optoelectronics.
URI
https://scholarworks.unist.ac.kr/handle/201301/52692
URL
https://advances.sciencemag.org/content/7/13/eabd7921
DOI
10.1126/sciadv.abd7921
ISSN
2375-2548
Appears in Collections:
UCRF_Journal Papers
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