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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Investigation of Gate-Induced Drain Leakage Suppression by Fringing Field in High-k/Metal Gate CMOS Technology
- Author(s)
- Kim, Kyung Rok
- Issued Date
- 2014-11-07
- Citation
- International Microprocesses and Nanotechnology Conference
- Publisher
- The Japan Society of Applied Physics
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