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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Santa Barbara, CA, USA | - |
| dc.citation.endPage | 141 | - |
| dc.citation.startPage | 140 | - |
| dc.citation.title | 57th Annual Device Research Conference Digest | - |
| dc.contributor.author | Chae, Dong-Hyuk | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Kim, Dae Hwan | - |
| dc.contributor.author | Kwon, Jang-Yeon | - |
| dc.contributor.author | Kim, Ki-Bum | - |
| dc.contributor.author | Lee, Jong Duk | - |
| dc.contributor.author | Park, Byung-Gook | - |
| dc.date.accessioned | 2023-12-20T06:38:16Z | - |
| dc.date.available | 2023-12-20T06:38:16Z | - |
| dc.date.created | 2021-03-23 | - |
| dc.date.issued | 1999-06-30 | - |
| dc.description.abstract | A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals. | - |
| dc.identifier.bibliographicCitation | 57th Annual Device Research Conference Digest , pp.140 - 141 | - |
| dc.identifier.scopusid | 2-s2.0-0033362264 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50720 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE, Piscataway, NJ, United States | - |
| dc.title | Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 1999-06-28 | - |
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