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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Fabrication of thin film transistor with solution-processed nitrogen doped indium-zinc oxide
- Author(s)
- Ha, S., Kim, B.-J., Kim, Y.-H., Yoon, Tae-Sik, Kim, Y.-S., Lee, H.H.
- Issued Date
- 2010-10-11
- Citation
- 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, pp.822 - 823
- Abstract
- Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer doped with nitrogen by the solution-processed deposition method were fabricated and their TFTs characterizations were discussed. Heavily doped Si was used as a common gate and PECVD silicon nitride (SiNx) was used as a gate dielectric material for the TFT. The nitrogen doping had an effect of reducing the leakage current of the fabricated TFT.
- Publisher
- IMID/IDMC/ASIA Display 2010
- ISSN
- 1738-7558
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