File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | Seoul | - |
| dc.citation.endPage | 823 | - |
| dc.citation.startPage | 822 | - |
| dc.citation.title | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 | - |
| dc.contributor.author | Ha, S. | - |
| dc.contributor.author | Kim, B.-J. | - |
| dc.contributor.author | Kim, Y.-H. | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Kim, Y.-S. | - |
| dc.contributor.author | Lee, H.H. | - |
| dc.date.accessioned | 2023-12-20T03:36:11Z | - |
| dc.date.available | 2023-12-20T03:36:11Z | - |
| dc.date.created | 2021-03-15 | - |
| dc.date.issued | 2010-10-11 | - |
| dc.description.abstract | Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer doped with nitrogen by the solution-processed deposition method were fabricated and their TFTs characterizations were discussed. Heavily doped Si was used as a common gate and PECVD silicon nitride (SiNx) was used as a gate dielectric material for the TFT. The nitrogen doping had an effect of reducing the leakage current of the fabricated TFT. | - |
| dc.identifier.bibliographicCitation | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, pp.822 - 823 | - |
| dc.identifier.issn | 1738-7558 | - |
| dc.identifier.scopusid | 2-s2.0-79959975336 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50672 | - |
| dc.language | 영어 | - |
| dc.publisher | IMID/IDMC/ASIA Display 2010 | - |
| dc.title | Fabrication of thin film transistor with solution-processed nitrogen doped indium-zinc oxide | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2010-10-11 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.