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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Effect of N doping on solution-processed indium zinc tin oxide thin film transistors
- Author(s)
- Kim, B.-J., Kim, H.-J., Jung, S.-M., Yoon, Tae-Sik, Kim, Y.-S., Lee, H.H.
- Issued Date
- 2010-10-11
- Citation
- 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, pp.675 - 676
- Abstract
- Thin film transistors TFTs with nitrogen doped indium zinc tin oxide channel layer were fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride (SiNx) was used as a gete dielectric material for the TFT. Source and drain electrodes were deposited on the SiNx layer and IZTO:N layer was formed by spin-coating method.
- Publisher
- IMID/IDMC/ASIA Display 2010
- ISSN
- 1738-7558
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