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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | Seoul | - |
| dc.citation.endPage | 676 | - |
| dc.citation.startPage | 675 | - |
| dc.citation.title | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 | - |
| dc.contributor.author | Kim, B.-J. | - |
| dc.contributor.author | Kim, H.-J. | - |
| dc.contributor.author | Jung, S.-M. | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Kim, Y.-S. | - |
| dc.contributor.author | Lee, H.H. | - |
| dc.date.accessioned | 2023-12-20T03:36:10Z | - |
| dc.date.available | 2023-12-20T03:36:10Z | - |
| dc.date.created | 2021-03-15 | - |
| dc.date.issued | 2010-10-11 | - |
| dc.description.abstract | Thin film transistors TFTs with nitrogen doped indium zinc tin oxide channel layer were fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride (SiNx) was used as a gete dielectric material for the TFT. Source and drain electrodes were deposited on the SiNx layer and IZTO:N layer was formed by spin-coating method. | - |
| dc.identifier.bibliographicCitation | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, pp.675 - 676 | - |
| dc.identifier.issn | 1738-7558 | - |
| dc.identifier.scopusid | 2-s2.0-79959922611 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50671 | - |
| dc.language | 영어 | - |
| dc.publisher | IMID/IDMC/ASIA Display 2010 | - |
| dc.title | Effect of N doping on solution-processed indium zinc tin oxide thin film transistors | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2010-10-11 | - |
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