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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Resistive switching characteristics of Ag2Se thin film
- Author(s)
- Lee, N.J., Park, M.R., Yoon, Tae-Sik, Choi, Y.J., Kang, C.J.
- Issued Date
- 2012-08-20
- Citation
- 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
- Abstract
- Electrical properties of silver selenide (Ag2Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from 7 to +7 V at room temperature. In addition, the Ag/Ag 2Se/Au structure was compared with the Ag2Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag2Se thin film were presented, and the mechanism was discussed.
- Publisher
- IEEE
- ISSN
- 1944-9399
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