dc.citation.conferencePlace |
UK |
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dc.citation.conferencePlace |
Birmingham |
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dc.citation.title |
2012 12th IEEE International Conference on Nanotechnology, NANO 2012 |
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dc.contributor.author |
Lee, N.J. |
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dc.contributor.author |
Park, M.R. |
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dc.contributor.author |
Yoon, Tae-Sik |
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dc.contributor.author |
Choi, Y.J. |
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dc.contributor.author |
Kang, C.J. |
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dc.date.accessioned |
2023-12-20T02:06:04Z |
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dc.date.available |
2023-12-20T02:06:04Z |
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dc.date.created |
2021-03-15 |
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dc.date.issued |
2012-08-20 |
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dc.description.abstract |
Electrical properties of silver selenide (Ag2Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from 7 to +7 V at room temperature. In addition, the Ag/Ag 2Se/Au structure was compared with the Ag2Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag2Se thin film were presented, and the mechanism was discussed. |
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dc.identifier.bibliographicCitation |
2012 12th IEEE International Conference on Nanotechnology, NANO 2012 |
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dc.identifier.doi |
10.1109/NANO.2012.6322099 |
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dc.identifier.issn |
1944-9399 |
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dc.identifier.scopusid |
2-s2.0-84869175026 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/50649 |
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dc.language |
영어 |
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dc.publisher |
IEEE |
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dc.title |
Resistive switching characteristics of Ag2Se thin film |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2012-08-20 |
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