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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device

Author(s)
Seo, IlLee, Do-JoongHu, QuanliKwon, Chang-WooLim, KipilLee, Seung-HyunKim, Hyun-MiKim, Yong-SangLee, Hyun HoRyu, Du YeolKim, Ki-BumYoon, Tae-Sik
Issued Date
2010-03
DOI
10.1149/1.3271025
URI
https://scholarworks.unist.ac.kr/handle/201301/50281
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.K19 - K21
Abstract
CdSe colloidal nanocrystals with a size of similar to 5 nm were selectively incorporated in SiO2 nanopatterns formed by a self-assembled diblock copolymer patterning through a simple dip-coating process. The selective incorporation was achieved by capillary force, which drives the nanocrystals into the patterns during solvent evaporation in dip-coating. The capacitor structures of an Al-gate/atomic layer deposition-Al2O3 (27 nm)/CdSe (5 nm)/patterned SiO2 (25 nm)/p-Si substrate were fabricated to characterize the charging/discharging behavior for a memory device. The flatband voltage shift was observed by a charge transport between the gate and the nanocrystals. It demonstrates the colloidal nanocrystal application to a memory device through selective incorporation in regularly ordered nanopatterns by a simple dip-coating process.
Publisher
ELECTROCHEMICAL SOC INC
ISSN
1099-0062
Keyword (Author)
aluminiumaluminium compoundscadmium compoundscapillaritycolloidal crystalsdielectric materialsdip coatingelemental semiconductorsII-VI semiconductorsnanopatterningnanostructured materialspolymer blendsself-assemblysiliconsilicon compoundswide band gap semiconductors
Keyword
NANOPARTICLES

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