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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | K21 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | K19 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Seo, Il | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Hu, Quanli | - |
dc.contributor.author | Kwon, Chang-Woo | - |
dc.contributor.author | Lim, Kipil | - |
dc.contributor.author | Lee, Seung-Hyun | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Kim, Yong-Sang | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Ryu, Du Yeol | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-22T07:11:05Z | - |
dc.date.available | 2023-12-22T07:11:05Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2010-03 | - |
dc.description.abstract | CdSe colloidal nanocrystals with a size of similar to 5 nm were selectively incorporated in SiO2 nanopatterns formed by a self-assembled diblock copolymer patterning through a simple dip-coating process. The selective incorporation was achieved by capillary force, which drives the nanocrystals into the patterns during solvent evaporation in dip-coating. The capacitor structures of an Al-gate/atomic layer deposition-Al2O3 (27 nm)/CdSe (5 nm)/patterned SiO2 (25 nm)/p-Si substrate were fabricated to characterize the charging/discharging behavior for a memory device. The flatband voltage shift was observed by a charge transport between the gate and the nanocrystals. It demonstrates the colloidal nanocrystal application to a memory device through selective incorporation in regularly ordered nanopatterns by a simple dip-coating process. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.K19 - K21 | - |
dc.identifier.doi | 10.1149/1.3271025 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-74849085437 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50281 | - |
dc.identifier.wosid | 000273690400031 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | aluminium | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | cadmium compounds | - |
dc.subject.keywordAuthor | capillarity | - |
dc.subject.keywordAuthor | colloidal crystals | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.subject.keywordAuthor | dip coating | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | nanopatterning | - |
dc.subject.keywordAuthor | nanostructured materials | - |
dc.subject.keywordAuthor | polymer blends | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | silicon compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
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