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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer
- Author(s)
- Kim, Jung-Min, Lee, Dong-Hoon, Jeun, Jun-Ho, Yoon, Tae-Sik, Lee, Hyun Ho, Lee, Jong-Wook, Kim, Yong-Sang
- Issued Date
- 2011-07
- Citation
- SYNTHETIC METALS, v.161, no.13-14, pp.1155 - 1158
- Abstract
- The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics. (C) 2011 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE SA
- ISSN
- 0379-6779
- Keyword (Author)
- CdSe nano-particles, Non-volatile organic memory, Nano-particle/polymer blend
- Keyword
- CELLS
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