Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

Abstract

The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance-voltage and current-voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics. (C) 2011 Elsevier B.V. All rights reserved.