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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Resistive switching characteristics of core-shell nanoparticles of metal-oxide on flexible substrate
- Author(s)
- Yoo, J.-W., Hu, Q., Baek, Y.-J., Kang, C.J., Lee, H.H., Yoon, Tae-Sik
- Issued Date
- 2011-10
- Citation
- ECS Transactions, v.41, no.3, pp.483 - 488
- Abstract
- Resistive switching characteristics of FePt/γ-Fe 2O 3 core-shell nanoparticle (NP) assembly on flexible substrate of polyethersulfone (PES) as being sandwiched by top and bottom Al electrodes were investigated for the potential as a flexible resistive switching memory. The NPs assembly was formed by solution process of dip-coating. The initial bipolar switching was observed in the voltage range < ±3 V, and the subsequent voltage sweep to higher voltage led to the increase of resistance, which is not typically observed in γ-Fe 2O 3 NP or other metal-oxide layer structure. Though the fundamental principle of resistive change in core-shell NPs is not clear, it demonstrated the feasibility of flexible memory application through solution-based processes. ©The Electrochemical Society.
- Publisher
- ECS
- ISSN
- 1938-5862
- Keyword
- Al electrode, Core-shell, Core-shell nanoparticles, Dip coating, Flexible substrate, Fundamental principles, Layer structures, Memory applications, Metal-oxide, Polyethersulfones, Resistive switching, Resistive switching memories, Solution process, Voltage ranges, Voltage sweep, Ethers, Metal nanoparticles, Photonics, Switching systems, Dielectric materials
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