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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 488 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 483 | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 41 | - |
dc.contributor.author | Yoo, J.-W. | - |
dc.contributor.author | Hu, Q. | - |
dc.contributor.author | Baek, Y.-J. | - |
dc.contributor.author | Kang, C.J. | - |
dc.contributor.author | Lee, H.H. | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-22T05:42:17Z | - |
dc.date.available | 2023-12-22T05:42:17Z | - |
dc.date.created | 2021-03-08 | - |
dc.date.issued | 2011-10 | - |
dc.description.abstract | Resistive switching characteristics of FePt/γ-Fe 2O 3 core-shell nanoparticle (NP) assembly on flexible substrate of polyethersulfone (PES) as being sandwiched by top and bottom Al electrodes were investigated for the potential as a flexible resistive switching memory. The NPs assembly was formed by solution process of dip-coating. The initial bipolar switching was observed in the voltage range < ±3 V, and the subsequent voltage sweep to higher voltage led to the increase of resistance, which is not typically observed in γ-Fe 2O 3 NP or other metal-oxide layer structure. Though the fundamental principle of resistive change in core-shell NPs is not clear, it demonstrated the feasibility of flexible memory application through solution-based processes. ©The Electrochemical Society. | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.41, no.3, pp.483 - 488 | - |
dc.identifier.doi | 10.1149/1.3633065 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.scopusid | 2-s2.0-84863127260 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50265 | - |
dc.language | 영어 | - |
dc.publisher | ECS | - |
dc.title | Resistive switching characteristics of core-shell nanoparticles of metal-oxide on flexible substrate | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.type.docType | Conference Paper | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Al electrode | - |
dc.subject.keywordPlus | Core-shell | - |
dc.subject.keywordPlus | Core-shell nanoparticles | - |
dc.subject.keywordPlus | Dip coating | - |
dc.subject.keywordPlus | Flexible substrate | - |
dc.subject.keywordPlus | Fundamental principles | - |
dc.subject.keywordPlus | Layer structures | - |
dc.subject.keywordPlus | Memory applications | - |
dc.subject.keywordPlus | Metal-oxide | - |
dc.subject.keywordPlus | Polyethersulfones | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Resistive switching memories | - |
dc.subject.keywordPlus | Solution process | - |
dc.subject.keywordPlus | Voltage ranges | - |
dc.subject.keywordPlus | Voltage sweep | - |
dc.subject.keywordPlus | Ethers | - |
dc.subject.keywordPlus | Metal nanoparticles | - |
dc.subject.keywordPlus | Photonics | - |
dc.subject.keywordPlus | Switching systems | - |
dc.subject.keywordPlus | Dielectric materials | - |
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