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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Organic memory device with polyaniline nanoparticles embedded as charging elements

Author(s)
Kim, Yo-HanKim, MinkeunOh, SewookJung, HunsangKim, YejinYoon, Tae-SikKim, Yong-SangLee, Hyun Ho
Issued Date
2012-04
DOI
10.1063/1.4704571
URI
https://scholarworks.unist.ac.kr/handle/201301/50261
Citation
APPLIED PHYSICS LETTERS, v.100, no.16
Abstract
Polyaniline nanoparticles (PANI NPs) were synthesized and fabricated as charging elements for organic memory devices. The PANI NPs charging layer was self-assembled by epoxy-amine bonds between 3-glycidylpropyl trimethoxysilane functionalized dielectrics and PANI NPs. A memory window of 5.8V (Delta V-FB) represented by capacitance-voltage hysteresis was obtained for metal-pentacene-insulator-silicon capacitor. In addition, program/erase operations controlled by gate bias (-/+90 V) were demonstrated in the PANI NPs embedded pentacene thin film transistor device with polyvinylalcohol dielectric on flexible polyimide substrate. These results can be extended to development of fully organic-based electronic device. (C) 2012 American Institute of Physics. [http://dx.doi.org.openlink.unist.ac.kr:8080/10.1063/1.4704571]
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword (Author)
bonds (chemical)capacitorsdielectric materialsgoldnanoparticlesorganic semiconductorspolymersrandom-access storageresinsself-assemblysilicon compoundsthin film transistors

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