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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Nanocrystal floating gate memory with indium gallium zinc oxide channel and Pt- Fe2O3 core-shell nanocrystals
- Author(s)
- Lee, S.C., Hu, Q., Lee, J.Y., Baek, Y.-J., Lee, H.H., Yoon, Tae-Sik
- Issued Date
- 2012-10
- Citation
- ECS Transactions, v.50, no.8, pp.281 - 287
- Abstract
- A nanocrystal (NC) floating gate memory with colloidal Pt-Fe 2O3 core-shell NCs with indium gallium zinc oxide (IGZO) channel was fabricated. The Pt core and Fe2O3 shell in NC play a role of charge storage node and thin tunneling dielectric, respectively. The NCs layer was formed on SiO2(control oxide, 30nm)/n+-Si bottom gate by solution-based dip-coating process. Then, the IGZO channel was prepared by rf magnetron sputtering at room temperature. The NC floating gate memory exhibited the threshold voltage shift up to 1.67 V at gate pulsing 20 V, demonstrating the feasibility of employing colloidal core-shell NCs in gate stack of NC floating gate memory. © The Electrochemical Society.
- Publisher
- ECS
- ISSN
- 1938-5862
- Keyword
- Core-Shell Nanocrystals, Dip-coating process, Floating gate memory, Indium gallium zinc oxides, Nanocrystal floating-gate memory, rf-Magnetron sputtering, Threshold voltage shifts, Tunneling dielectrics, Magnetron sputtering, Nanocrystals, Platinum, Shells (structures), Thin film transistors
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