Nanocrystal floating gate memory with indium gallium zinc oxide channel and Pt- Fe2O3 core-shell nanocrystals

Abstract

A nanocrystal (NC) floating gate memory with colloidal Pt-Fe 2O3 core-shell NCs with indium gallium zinc oxide (IGZO) channel was fabricated. The Pt core and Fe2O3 shell in NC play a role of charge storage node and thin tunneling dielectric, respectively. The NCs layer was formed on SiO2(control oxide, 30nm)/n+-Si bottom gate by solution-based dip-coating process. Then, the IGZO channel was prepared by rf magnetron sputtering at room temperature. The NC floating gate memory exhibited the threshold voltage shift up to 1.67 V at gate pulsing 20 V, demonstrating the feasibility of employing colloidal core-shell NCs in gate stack of NC floating gate memory. © The Electrochemical Society.