Electrical characterizations of solution-processed dielectric layer octamethylcyclotetrasiloxane

Abstract

Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100 degrees C, 300 degrees C, and 500 degrees C were examined and their dielectric properties were characterized on structures of metal-insulator-silicon (MIS) capacitor and thin film transistor (TFT) with solution-processed zinc-tin-oxide (ZTO) semiconductor. Chemical changes from the UV/ozone oxidation and annealing were analyzed by FIR and XPS. For the 500 degrees C annealed dielectric layer with UV/ozone oxidation, no hysteresis in capacitance-voltage (C-V) measurement was detected having a high dielectric constant (k) of 5.52. The OMTS film can be applicable as a gate dielectric layer towards intensive development of printed electronics. (C) 2014 Elsevier B.V. All rights reserved.