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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 10 | - |
dc.citation.startPage | 6 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 118 | - |
dc.contributor.author | Jung, Hunsang | - |
dc.contributor.author | Kim, Minkeun | - |
dc.contributor.author | Kim, Yejin | - |
dc.contributor.author | Oh, Sewook | - |
dc.contributor.author | Kang, Chi-Jung | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.date.accessioned | 2023-12-22T02:42:23Z | - |
dc.date.available | 2023-12-22T02:42:23Z | - |
dc.date.created | 2021-03-05 | - |
dc.date.issued | 2014-04 | - |
dc.description.abstract | Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100 degrees C, 300 degrees C, and 500 degrees C were examined and their dielectric properties were characterized on structures of metal-insulator-silicon (MIS) capacitor and thin film transistor (TFT) with solution-processed zinc-tin-oxide (ZTO) semiconductor. Chemical changes from the UV/ozone oxidation and annealing were analyzed by FIR and XPS. For the 500 degrees C annealed dielectric layer with UV/ozone oxidation, no hysteresis in capacitance-voltage (C-V) measurement was detected having a high dielectric constant (k) of 5.52. The OMTS film can be applicable as a gate dielectric layer towards intensive development of printed electronics. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.118, pp.6 - 10 | - |
dc.identifier.doi | 10.1016/j.mee.2014.01.004 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.scopusid | 2-s2.0-84893751186 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50242 | - |
dc.identifier.wosid | 000335431000002 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Electrical characterizations of solution-processed dielectric layer octamethylcyclotetrasiloxane | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Octamethylcyclotetrasiloxane | - |
dc.subject.keywordAuthor | Solution process | - |
dc.subject.keywordAuthor | MIS capacitor | - |
dc.subject.keywordAuthor | ZTO | - |
dc.subject.keywordAuthor | TFTs | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SILSESQUIOXANE | - |
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