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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Bipolar resistive switching behavior in Au/Pt-Fe2O3 core-shell nanoparticles assembly/Ti with 3 x 3 crossbar array structure

Author(s)
Hu, QuanliPark, MiraShim, Jae HyukYoon, Tae-SikChoi, Young JinKang, Chi Jung
Issued Date
2014-09
DOI
10.1016/j.mee.2014.04.023
URI
https://scholarworks.unist.ac.kr/handle/201301/50240
Citation
MICROELECTRONIC ENGINEERING, v.127, pp.40 - 43
Abstract
The fabrication of 3 x 3 crossbar arrays with a width of 20 mu m is demonstrated. The bipolar resistive switching characteristics in Pt-Fe2O3 core-shell nanopartides are investigated in the crossbar structure of top electrode (Au)/Pt-Fe2O3 nanoparticle assembly/bottom electrode (Ti) on SiO2/Si substrate. The monodisperse Pt-Fe2O3 nanoparticles with the diameter similar to 15 nm are chemically synthesized by the preferential oxidation of Fe and then pileup of Pt into the core in the presence of oleic acid and oleylamine at high temperature. The nanoparticles are assembled as a layer with a thickness of 50 nm by repeated dip-coating. The Pt cores in the core-shell nanoparticles act as electron traps. The bipolar resistive switching behavior in Au/nanoparticle assembly/Ti device could be caused by the electron trapping and detrapping of the nanoparticles. The resistance ratio of HRS to LRS is similar to 57 at a reading voltage of 0.5 V. The value of reset voltage is 3.4 V and that of set voltages is -1.0 V. (C) 2014 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER
ISSN
0167-9317
Keyword (Author)
Resistive switchingCore-shell nanoparticleCrossbar array
Keyword
MEMORYLAYER

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