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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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dc.citation.endPage 43 -
dc.citation.startPage 40 -
dc.citation.title MICROELECTRONIC ENGINEERING -
dc.citation.volume 127 -
dc.contributor.author Hu, Quanli -
dc.contributor.author Park, Mira -
dc.contributor.author Shim, Jae Hyuk -
dc.contributor.author Yoon, Tae-Sik -
dc.contributor.author Choi, Young Jin -
dc.contributor.author Kang, Chi Jung -
dc.date.accessioned 2023-12-22T02:10:51Z -
dc.date.available 2023-12-22T02:10:51Z -
dc.date.created 2021-03-05 -
dc.date.issued 2014-09 -
dc.description.abstract The fabrication of 3 x 3 crossbar arrays with a width of 20 mu m is demonstrated. The bipolar resistive switching characteristics in Pt-Fe2O3 core-shell nanopartides are investigated in the crossbar structure of top electrode (Au)/Pt-Fe2O3 nanoparticle assembly/bottom electrode (Ti) on SiO2/Si substrate. The monodisperse Pt-Fe2O3 nanoparticles with the diameter similar to 15 nm are chemically synthesized by the preferential oxidation of Fe and then pileup of Pt into the core in the presence of oleic acid and oleylamine at high temperature. The nanoparticles are assembled as a layer with a thickness of 50 nm by repeated dip-coating. The Pt cores in the core-shell nanoparticles act as electron traps. The bipolar resistive switching behavior in Au/nanoparticle assembly/Ti device could be caused by the electron trapping and detrapping of the nanoparticles. The resistance ratio of HRS to LRS is similar to 57 at a reading voltage of 0.5 V. The value of reset voltage is 3.4 V and that of set voltages is -1.0 V. (C) 2014 Elsevier B.V. All rights reserved. -
dc.identifier.bibliographicCitation MICROELECTRONIC ENGINEERING, v.127, pp.40 - 43 -
dc.identifier.doi 10.1016/j.mee.2014.04.023 -
dc.identifier.issn 0167-9317 -
dc.identifier.scopusid 2-s2.0-84902244693 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50240 -
dc.identifier.wosid 000339221000007 -
dc.language 영어 -
dc.publisher ELSEVIER -
dc.title Bipolar resistive switching behavior in Au/Pt-Fe2O3 core-shell nanoparticles assembly/Ti with 3 x 3 crossbar array structure -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied -
dc.relation.journalResearchArea Engineering; Science & Technology - Other Topics; Optics; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Resistive switching -
dc.subject.keywordAuthor Core-shell nanoparticle -
dc.subject.keywordAuthor Crossbar array -
dc.subject.keywordPlus MEMORY -
dc.subject.keywordPlus LAYER -

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