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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window

Author(s)
Zheng, HongKim, Hyung JunYang, PaulPark, Jong-SungKim, Dong WookLee, Hyun HoKang, Chi JungYoon, Tae-Sik
Issued Date
2017-05
DOI
10.1088/1361-6641/aa6379
URI
https://scholarworks.unist.ac.kr/handle/201301/50215
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.5
Abstract
Ag/CeO2(-45 nm)/ Pt devices exhibited forming-free bipolar resistive switching with a large memory window ( low-resistance-state (LRS)/ high-resistance-state (HRS) ratio > 10(6)) at a low switching voltage (<+/- 1 -2V) in voltage sweep condition. Also, they retained a large memory window (> 10(4)) at a pulse operation (+/- 5V, 50 mu s). The high oxygen ionic conductivity of the CeO2 layer as well as the migration of silver facilitated the formation of filament for the transition to LRS at a low voltage without a high voltage forming operation. Also, a certain amount of defects in the CeO2 layer was required for stable HRS with space-charge-limitedconduction, which was confirmed comparing the devices with non-annealed and annealed CeO2 layers.
Publisher
IOP PUBLISHING LTD
ISSN
0268-1242
Keyword (Author)
resistive switchingCeO2forming-freelarge memory windowlow switching voltage
Keyword
RANDOM-ACCESS MEMORYOXIDE-ELECTROLYTEMETAL-OXIDESFILMSCONDUCTIVITYCERIA

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