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DC Field | Value | Language |
---|---|---|
dc.citation.number | 5 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 32 | - |
dc.contributor.author | Zheng, Hong | - |
dc.contributor.author | Kim, Hyung Jun | - |
dc.contributor.author | Yang, Paul | - |
dc.contributor.author | Park, Jong-Sung | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.contributor.author | Kang, Chi Jung | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-21T22:13:13Z | - |
dc.date.available | 2023-12-21T22:13:13Z | - |
dc.date.created | 2021-03-05 | - |
dc.date.issued | 2017-05 | - |
dc.description.abstract | Ag/CeO2(-45 nm)/ Pt devices exhibited forming-free bipolar resistive switching with a large memory window ( low-resistance-state (LRS)/ high-resistance-state (HRS) ratio > 10(6)) at a low switching voltage (<+/- 1 -2V) in voltage sweep condition. Also, they retained a large memory window (> 10(4)) at a pulse operation (+/- 5V, 50 mu s). The high oxygen ionic conductivity of the CeO2 layer as well as the migration of silver facilitated the formation of filament for the transition to LRS at a low voltage without a high voltage forming operation. Also, a certain amount of defects in the CeO2 layer was required for stable HRS with space-charge-limitedconduction, which was confirmed comparing the devices with non-annealed and annealed CeO2 layers. | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.5 | - |
dc.identifier.doi | 10.1088/1361-6641/aa6379 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.scopusid | 2-s2.0-85018450422 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50215 | - |
dc.identifier.wosid | 000398122000002 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | CeO2 | - |
dc.subject.keywordAuthor | forming-free | - |
dc.subject.keywordAuthor | large memory window | - |
dc.subject.keywordAuthor | low switching voltage | - |
dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
dc.subject.keywordPlus | OXIDE-ELECTROLYTE | - |
dc.subject.keywordPlus | METAL-OXIDES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | CERIA | - |
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