File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices
- Author(s)
- Hu, Quanli, Kang, Tae Su, Abbas, Haider, Lee, Tae Sung, Lee, Nam Joo, Park, Mi Ra, Yoon, Tae-Sik, Kang, Chi Jung
- Issued Date
- 2018-04
- Citation
- MICROELECTRONIC ENGINEERING, v.189, pp.28 - 32
- Abstract
- The resistive switching characteristics of MnO and CeO2 layers with a large resistance ratio (>10(5)) were demonstrated. The Ag/MnO/CeO2/Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO2 layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO2 and CeO2-x. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2017 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- ISSN
- 0167-9317
- Keyword (Author)
- Resistive switching, Manganese oxide, Cerium oxide, Heterostructures
- Keyword
- MANGANESE OXIDE, BEHAVIOR
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.