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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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dc.citation.endPage 32 -
dc.citation.startPage 28 -
dc.citation.title MICROELECTRONIC ENGINEERING -
dc.citation.volume 189 -
dc.contributor.author Hu, Quanli -
dc.contributor.author Kang, Tae Su -
dc.contributor.author Abbas, Haider -
dc.contributor.author Lee, Tae Sung -
dc.contributor.author Lee, Nam Joo -
dc.contributor.author Park, Mi Ra -
dc.contributor.author Yoon, Tae-Sik -
dc.contributor.author Kang, Chi Jung -
dc.date.accessioned 2023-12-21T20:48:01Z -
dc.date.available 2023-12-21T20:48:01Z -
dc.date.created 2021-03-05 -
dc.date.issued 2018-04 -
dc.description.abstract The resistive switching characteristics of MnO and CeO2 layers with a large resistance ratio (>10(5)) were demonstrated. The Ag/MnO/CeO2/Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO2 layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO2 and CeO2-x. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2017 Elsevier B.V. All rights reserved. -
dc.identifier.bibliographicCitation MICROELECTRONIC ENGINEERING, v.189, pp.28 - 32 -
dc.identifier.doi 10.1016/j.mee.2017.12.014 -
dc.identifier.issn 0167-9317 -
dc.identifier.scopusid 2-s2.0-85039729173 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50206 -
dc.identifier.wosid 000424719600005 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE BV -
dc.title Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied -
dc.relation.journalResearchArea Engineering; Science & Technology - Other Topics; Optics; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Resistive switching -
dc.subject.keywordAuthor Manganese oxide -
dc.subject.keywordAuthor Cerium oxide -
dc.subject.keywordAuthor Heterostructures -
dc.subject.keywordPlus MANGANESE OXIDE -
dc.subject.keywordPlus BEHAVIOR -

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