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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure
- Author(s)
- Hu, Quanli, Park, Mi Ra, Abbas, Haider, Kang, Tae Su, Yoon, Tae-Sik, Kang, Chi Jung
- Issued Date
- 2018-04
- Citation
- MICROELECTRONIC ENGINEERING, v.190, pp.7 - 10
- Abstract
- The fabrication of 5 x 5 crossbar array with a line width of 20 mu m was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/ Ta2O5/Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2018 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER
- ISSN
- 0167-9317
- Keyword (Author)
- Resistive switching, Manganese oxide, Tantalum oxide, Crossbar array
- Keyword
- MEMORY DEVICE, BEHAVIOR
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