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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 10 | - |
dc.citation.startPage | 7 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 190 | - |
dc.contributor.author | Hu, Quanli | - |
dc.contributor.author | Park, Mi Ra | - |
dc.contributor.author | Abbas, Haider | - |
dc.contributor.author | Kang, Tae Su | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Kang, Chi Jung | - |
dc.date.accessioned | 2023-12-21T20:47:59Z | - |
dc.date.available | 2023-12-21T20:47:59Z | - |
dc.date.created | 2021-03-05 | - |
dc.date.issued | 2018-04 | - |
dc.description.abstract | The fabrication of 5 x 5 crossbar array with a line width of 20 mu m was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/ Ta2O5/Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2018 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.190, pp.7 - 10 | - |
dc.identifier.doi | 10.1016/j.mee.2018.01.005 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.scopusid | 2-s2.0-85040022268 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50205 | - |
dc.identifier.wosid | 000426030800002 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Manganese oxide | - |
dc.subject.keywordAuthor | Tantalum oxide | - |
dc.subject.keywordAuthor | Crossbar array | - |
dc.subject.keywordPlus | MEMORY DEVICE | - |
dc.subject.keywordPlus | BEHAVIOR | - |
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