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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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dc.citation.endPage 10 -
dc.citation.startPage 7 -
dc.citation.title MICROELECTRONIC ENGINEERING -
dc.citation.volume 190 -
dc.contributor.author Hu, Quanli -
dc.contributor.author Park, Mi Ra -
dc.contributor.author Abbas, Haider -
dc.contributor.author Kang, Tae Su -
dc.contributor.author Yoon, Tae-Sik -
dc.contributor.author Kang, Chi Jung -
dc.date.accessioned 2023-12-21T20:47:59Z -
dc.date.available 2023-12-21T20:47:59Z -
dc.date.created 2021-03-05 -
dc.date.issued 2018-04 -
dc.description.abstract The fabrication of 5 x 5 crossbar array with a line width of 20 mu m was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/ Ta2O5/Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2018 Elsevier B.V. All rights reserved. -
dc.identifier.bibliographicCitation MICROELECTRONIC ENGINEERING, v.190, pp.7 - 10 -
dc.identifier.doi 10.1016/j.mee.2018.01.005 -
dc.identifier.issn 0167-9317 -
dc.identifier.scopusid 2-s2.0-85040022268 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50205 -
dc.identifier.wosid 000426030800002 -
dc.language 영어 -
dc.publisher ELSEVIER -
dc.title Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied -
dc.relation.journalResearchArea Engineering; Science & Technology - Other Topics; Optics; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Resistive switching -
dc.subject.keywordAuthor Manganese oxide -
dc.subject.keywordAuthor Tantalum oxide -
dc.subject.keywordAuthor Crossbar array -
dc.subject.keywordPlus MEMORY DEVICE -
dc.subject.keywordPlus BEHAVIOR -

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