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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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The Study on the Behavior of TiN Thin Film Growth According to Deposition Pressure in PECVD Process

Alternative Title
플라즈마 화학 증착에서 증착압력에 따른 TiN의 성장거동
Author(s)
Lee, ZonghoonNam, O.H.Lee, I.W.Kim, M.I.
Issued Date
1992-06
URI
https://scholarworks.unist.ac.kr/handle/201301/4929
Citation
열처리공학회지, v.5, no.2, pp.95 - 102
Abstract
In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, Y=aX², approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.
Publisher
한국열처리공학회
ISSN
1225-1070

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