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- Lee, Zonghoon
- Atomic-Scale Electron Microscopy Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 102 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 95 | - |
| dc.citation.title | 열처리공학회지 | - |
| dc.citation.volume | 5 | - |
| dc.contributor.author | Lee, Zonghoon | - |
| dc.contributor.author | Nam, O.H. | - |
| dc.contributor.author | Lee, I.W. | - |
| dc.contributor.author | Kim, M.I. | - |
| dc.date.accessioned | 2023-12-22T13:07:22Z | - |
| dc.date.available | 2023-12-22T13:07:22Z | - |
| dc.date.created | 2014-06-09 | - |
| dc.date.issued | 1992-06 | - |
| dc.description.abstract | In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, Y=aX², approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure. | - |
| dc.identifier.bibliographicCitation | 열처리공학회지, v.5, no.2, pp.95 - 102 | - |
| dc.identifier.issn | 1225-1070 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4929 | - |
| dc.language | 영어 | - |
| dc.publisher | 한국열처리공학회 | - |
| dc.title.alternative | 플라즈마 화학 증착에서 증착압력에 따른 TiN의 성장거동 | - |
| dc.title | The Study on the Behavior of TiN Thin Film Growth According to Deposition Pressure in PECVD Process | - |
| dc.type | Article | - |
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