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Lee, Chang Young
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Alkalide-assisted direct electron injection for the noninvasive n-type doping of graphene

Author(s)
Park, SanghwanKim, Yun-TaeMin, HyegiMoon, Seung MinLee, SeongwooLee, Chang Young
Issued Date
2021-01
DOI
10.1021/acsami.0c19153
URI
https://scholarworks.unist.ac.kr/handle/201301/49274
Fulltext
https://pubs.acs.org/doi/10.1021/acsami.0c19153
Citation
ACS APPLIED MATERIALS & INTERFACES, v.13, no.1, pp.1270 - 1276
Abstract
Although the doping of graphene grown by chemical vapor deposition is crucial in graphene-based electronics, noninvasive methods of n-type doping have not been widely investigated in comparison with p-type doping methods. We developed a convenient and robust method for the noninvasive n-type doping of graphene, wherein electrons are directly injected from sodium anions into the graphene. This method involves immersing the graphene in solutions of [K(15-crown-5)(2)]Na prepared by dissolving a sodium-potassium (NaK) alloy in a 15-crown-5 solution. The n-type doping of the graphene was confirmed by downshifted G and 2D bands in Raman spectra and by the Dirac point shifting to a negative voltage. The electron-injected graphene showed no sign of structural damage, exhibited higher carrier mobilities than that of pristine graphene, and remained n-doped for over a month of storage in air. In addition, we demonstrated that electron injection enhances noncovalent interactions between graphene and metallomacrocycle molecules without requiring a linker, as used in previous studies, suggesting several potential applications of the method in modifying graphene with various functionalities.
Publisher
AMER CHEMICAL SOC
ISSN
1944-8244
Keyword (Author)
electron injectiongraphenesodium anionn-type dopingmetallomacrocyclenoncovalent interaction
Keyword
CHEMICAL-VAPOR-DEPOSITIONFIELD-EFFECT TRANSISTORSLAYER GRAPHENESINGLE-LAYERDIRAC POINTOXYGENFUNCTIONALIZATIONPERFORMANCESCATTERING

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