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Lee, Chang Young
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dc.citation.endPage 1276 -
dc.citation.number 1 -
dc.citation.startPage 1270 -
dc.citation.title ACS APPLIED MATERIALS & INTERFACES -
dc.citation.volume 13 -
dc.contributor.author Park, Sanghwan -
dc.contributor.author Kim, Yun-Tae -
dc.contributor.author Min, Hyegi -
dc.contributor.author Moon, Seung Min -
dc.contributor.author Lee, Seongwoo -
dc.contributor.author Lee, Chang Young -
dc.date.accessioned 2023-12-21T16:36:32Z -
dc.date.available 2023-12-21T16:36:32Z -
dc.date.created 2021-01-04 -
dc.date.issued 2021-01 -
dc.description.abstract Although the doping of graphene grown by chemical vapor deposition is crucial in graphene-based electronics, noninvasive methods of n-type doping have not been widely investigated in comparison with p-type doping methods. We developed a convenient and robust method for the noninvasive n-type doping of graphene, wherein electrons are directly injected from sodium anions into the graphene. This method involves immersing the graphene in solutions of [K(15-crown-5)(2)]Na prepared by dissolving a sodium-potassium (NaK) alloy in a 15-crown-5 solution. The n-type doping of the graphene was confirmed by downshifted G and 2D bands in Raman spectra and by the Dirac point shifting to a negative voltage. The electron-injected graphene showed no sign of structural damage, exhibited higher carrier mobilities than that of pristine graphene, and remained n-doped for over a month of storage in air. In addition, we demonstrated that electron injection enhances noncovalent interactions between graphene and metallomacrocycle molecules without requiring a linker, as used in previous studies, suggesting several potential applications of the method in modifying graphene with various functionalities. -
dc.identifier.bibliographicCitation ACS APPLIED MATERIALS & INTERFACES, v.13, no.1, pp.1270 - 1276 -
dc.identifier.doi 10.1021/acsami.0c19153 -
dc.identifier.issn 1944-8244 -
dc.identifier.scopusid 2-s2.0-85099054589 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/49274 -
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsami.0c19153 -
dc.identifier.wosid 000611066000124 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Alkalide-assisted direct electron injection for the noninvasive n-type doping of graphene -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor electron injection -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor sodium anion -
dc.subject.keywordAuthor n-type doping -
dc.subject.keywordAuthor metallomacrocycle -
dc.subject.keywordAuthor noncovalent interaction -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus LAYER GRAPHENE -
dc.subject.keywordPlus SINGLE-LAYER -
dc.subject.keywordPlus DIRAC POINT -
dc.subject.keywordPlus OXYGEN -
dc.subject.keywordPlus FUNCTIONALIZATION -
dc.subject.keywordPlus PERFORMANCE -
dc.subject.keywordPlus SCATTERING -

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