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Ding, Feng
IBS - Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Theoretical methods development for materials studies.
  • The formation mechanism of various carbon materials, from fullerene to carbon nanotube and graphene.
  • Kinetics and thermodynamics of materials growth and etching.
  • The structure, properties and fundamentals of nanomaterials.
  • The experimental synthesis of carbon nanotubes.

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Etching of two-dimensional materials

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Title
Etching of two-dimensional materials
Author
Sun, HaibinDong, JichenLiu, FengningDing, Feng
Issue Date
2021-01
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS TODAY, v.42, pp.192 - 213
Abstract
Etching is one of the key steps in materials processing in the semiconducting industry and recent progress in this field has shown that etching can be used to create various structures of two-dimensional (2D) materials, and can be viewed as a complementary technique to growth. Besides, etching has many other applications in 2D materials synthesis, processing and characterization, such as helping to understand the growth mechanism in-depth, identifying point and line defects in a 2D material, improving the quality of 2D materials by combining the growth process, and for fabricating 2D heterojunctions. Here, we review the current progress on the etching of graphene and other 2D materials; the content of this review includes: (i) etching of single-crystalline 2D materials; (ii) etching of multilayer 2D materials; (iii) etching of polycrystalline 2D materials; (iv) experimental factors, such as partial pressure of etchants, etchant species, and substrate, that affect 2D materials etching; (v) applications of etching in graphene and other 2D materials synthesis, characterization and processing and (vi) the challenges and opportunities in 2D materials etching.
URI
https://scholarworks.unist.ac.kr/handle/201301/49017
URL
https://www.sciencedirect.com/science/article/pii/S1369702120303345?via%3Dihub
DOI
10.1016/j.mattod.2020.09.031
ISSN
1369-7021
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MSE_Journal Papers
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