File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

DingFeng

Ding, Feng
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Etching of two-dimensional materials

Author(s)
Sun, HaibinDong, JichenLiu, FengningDing, Feng
Issued Date
2021-01
DOI
10.1016/j.mattod.2020.09.031
URI
https://scholarworks.unist.ac.kr/handle/201301/49017
Fulltext
https://www.sciencedirect.com/science/article/pii/S1369702120303345?via%3Dihub
Citation
MATERIALS TODAY, v.42, pp.192 - 213
Abstract
Etching is one of the key steps in materials processing in the semiconducting industry and recent progress in this field has shown that etching can be used to create various structures of two-dimensional (2D) materials, and can be viewed as a complementary technique to growth. Besides, etching has many other applications in 2D materials synthesis, processing and characterization, such as helping to understand the growth mechanism in-depth, identifying point and line defects in a 2D material, improving the quality of 2D materials by combining the growth process, and for fabricating 2D heterojunctions. Here, we review the current progress on the etching of graphene and other 2D materials; the content of this review includes: (i) etching of single-crystalline 2D materials; (ii) etching of multilayer 2D materials; (iii) etching of polycrystalline 2D materials; (iv) experimental factors, such as partial pressure of etchants, etchant species, and substrate, that affect 2D materials etching; (v) applications of etching in graphene and other 2D materials synthesis, characterization and processing and (vi) the challenges and opportunities in 2D materials etching.
Publisher
ELSEVIER SCI LTD
ISSN
1369-7021
Keyword (Author)
Two-dimensionalMetallic nanocrystalsRenewable energyElectrocatalysis

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.