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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Denver, Colorado; USA | - |
| dc.citation.title | The 4th International Conference on Nitride Semiconductors (ICNS-4) | - |
| dc.contributor.author | Kwon, Soon-Yong | - |
| dc.date.accessioned | 2023-12-20T06:35:55Z | - |
| dc.date.available | 2023-12-20T06:35:55Z | - |
| dc.date.created | 2014-12-23 | - |
| dc.date.issued | 2001-07-16 | - |
| dc.identifier.bibliographicCitation | The 4th International Conference on Nitride Semiconductors (ICNS-4) | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/47231 | - |
| dc.language | 영어 | - |
| dc.publisher | MRS; IEEE; EDS | - |
| dc.title | Growth of high-quality GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectric properties | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2001-07-16 | - |
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