2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, pp.971 - 974
Abstract
In principle, the photoresponse can be enhanced by scaling down the gate oxide thickness (tox), which is a key structural parameter for the channel 2DEG density modulation. By using our TCAD simulation framework, we found that the enhanced photoresponse by reducing tox has been originated from the increase of 2DEG density modulation by the improved subthreshold swing (SSW) of FET and the decrease of 2DEG propagation length (i.e. more asymmetric 2DEG) by degradation of the normal field-dependent channel mobility.