File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Realistic Single-Electron Transistor Modeling and Novel CMOS/SET Hybrid Circuits
- Author(s)
- Kim, Kyung Rok, Song, Ki-Whan, Baek, Gwanghyeon, Lee, Sang-Hoon, Kim, Dae Hwan, Park, Byung-Gook, Woo, Dong-Soo, Sim, Jae Sung, Lee, Jong Duk
- Issued Date
- 2003-08-12
- Citation
- 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003, pp.119 - 121
- Abstract
- A practical single electron transistor (SET) model has been proposed with appropriate modifications to the previous analytical model. We have observed that non-ideal SET current behaviors such as turn-off and peak-to-valley ratio (PVCR) degradation is successfully reproduced by the new SET model. Based on the realistic SET model, we have developed a novel circuit scheme which enhances the stability of CMOS/SET hybrid logic. It is demonstrated that a universal literal gate with complementary self-biasing scheme operates quite well at high temperature in which the peak-to-valley current ratio of Coulomb oscillation degrades severely.
- Publisher
- 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
- ISSN
- 1944-9399
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.