SOI MOSFET-Based Quantum Tunneling Device - FIBTET

Abstract

The fabrication of quantum-tunneling devices based on silicon (Si) technology was described. Channel and gate patterning were performed by electron beam lithography with hydrogen silsesquioxane (HSQ) and scanning electron microscopy (SEM) images. It was observed that the peak tunneling current increases according to the channel width increase due to the increment of tunneling area. It was found that the field-effect mechanisms reasonably affect the output characteristics of field-induced band-to-band tunneling effect transistor (FIBTET).