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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Multiple Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio for Practical Multi-Valued Logic and Memory Applications

Author(s)
Kim, Kyung RokShin, Sinhae
Issued Date
2014-11-06
DOI
10.7567/JJAP.54.06FG07
URI
https://scholarworks.unist.ac.kr/handle/201301/46687
Fulltext
http://iopscience.iop.org/article/10.7567/JJAP.54.06FG07/meta
Citation
International Microprocesses and Nanotechnology Conference
Abstract
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.
Publisher
The Japan Society of Applied Physics
ISSN
0021-4922

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