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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | JA | - |
| dc.citation.title | International Microprocesses and Nanotechnology Conference | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Shin, Sinhae | - |
| dc.date.accessioned | 2023-12-19T23:08:31Z | - |
| dc.date.available | 2023-12-19T23:08:31Z | - |
| dc.date.created | 2015-07-01 | - |
| dc.date.issued | 2014-11-06 | - |
| dc.description.abstract | In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors. | - |
| dc.identifier.bibliographicCitation | International Microprocesses and Nanotechnology Conference | - |
| dc.identifier.doi | 10.7567/JJAP.54.06FG07 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.scopusid | 2-s2.0-84930717769 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/46687 | - |
| dc.identifier.url | http://iopscience.iop.org/article/10.7567/JJAP.54.06FG07/meta | - |
| dc.language | 영어 | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Multiple Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio for Practical Multi-Valued Logic and Memory Applications | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2014-11-06 | - |
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