Growth characteristics and electrical properties of diameter-selective InAs nanowires
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- Growth characteristics and electrical properties of diameter-selective InAs nanowires
- Shin, Jae Cheol; Lee, Ari; Kim, Hyo Jin; Kim, Jae Hun; Choi, Kyoung Jin; Kim, Young Hun; Kim, Nam; Bae, Myung-Ho; Kim, Ju-Jin; Kim, Bum-Kyu
- Field-effect transistor; InAs nanowire; Mobility; MOCVD
- Issue Date
- KOREAN PHYSICAL SOC
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1678 - 1682
- Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
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