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Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Growth characteristics and electrical properties of diameter-selective InAs nanowires

Author(s)
Shin, Jae CheolLee, AriKim, Hyo JinKim, Jae HunChoi, Kyoung JinKim, Young HunKim, NamBae, Myung-HoKim, Ju-JinKim, Bum-Kyu
Issued Date
2013-06
DOI
10.3938/jkps.62.1678
URI
https://scholarworks.unist.ac.kr/handle/201301/4264
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879214178
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1678 - 1682
Abstract
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
Publisher
KOREAN PHYSICAL SOC
ISSN
0374-4884
Keyword (Author)
MOCVDInAs nanowireField-effect transistorMobility
Keyword
PHOTOVOLTAICSTRANSPORTEPITAXY

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