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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of TFET with Fast Switching Characteristics

Author(s)
Jeong, Jae WonShin, SunhaeJang, E-sanKim, Kyung Rok
Issued Date
2015-02-11
URI
https://scholarworks.unist.ac.kr/handle/201301/42261
Citation
The 22nd Korean Conference on Semiconductors
Abstract
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 107 is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications.
Publisher
The Institute Of Electronics And Information Engineers

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