dc.citation.conferencePlace |
KO |
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dc.citation.conferencePlace |
인천 송도컨벤시아 |
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dc.citation.title |
The 22nd Korean Conference on Semiconductors |
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dc.contributor.author |
Jeong, Jae Won |
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dc.contributor.author |
Shin, Sunhae |
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dc.contributor.author |
Jang, E-san |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.date.accessioned |
2023-12-19T22:41:50Z |
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dc.date.available |
2023-12-19T22:41:50Z |
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dc.date.created |
2015-09-02 |
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dc.date.issued |
2015-02-11 |
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dc.description.abstract |
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 107 is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications. |
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dc.identifier.bibliographicCitation |
The 22nd Korean Conference on Semiconductors |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/42261 |
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dc.language |
영어 |
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dc.publisher |
The Institute Of Electronics And Information Engineers |
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dc.title |
Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of TFET with Fast Switching Characteristics |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2015-02-10 |
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